A UNIVERSAL SOI-BASED HIGH TEMPERATURE GATE DRIVER INTEGRATED CIRCUIT FOR SiC POWER SWITCHES WITH ON-CHIP SHORT CIRCUIT PROTECTION
نویسندگان
چکیده
منابع مشابه
A Universal Soi-based High Temperature Gate Driver Integrated Circuit for Sic Power Switches with On-chip Short Circuit Protection
In recent years, increasing demand for hybrid electric vehicles (HEVs) has generated the need for reliable and low-cost hightemperature electronics which can operate at the high temperatures under the hood of these vehicles. A high-voltage and high temperature gate-driver integrated circuit for SiC FET switches with short circuit protection has been designed and implemented in a 0.8-micron sili...
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In recent years, the rapid increase in the market for hybrid electric vehicles has generated great demand for lowcost, high-volume, high-temperature power converters that can work in harsh environment (temperature ≥ 150°C) conditions. Most of the commercially available power semiconductor devices and associated control electronics are rated for maximum of 85°C ambient temperature. Under this ci...
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High-temperature power conversion modules (DC-DC converters, inverters, etc.) have enormous potential in extreme environment applications, including automotive, aerospace, geothermal, nuclear, and well logging. Power-to-volume and power-to-weight ratios of these modules can be significantly improved by employing Silicon Carbide (SiC) based power switches (MOSFET or JFET). Wide bandgap material ...
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Potential shortage of world wide petroleum supply in the near future has created an enormous demand for green vehicles that use higher power electric motor drive in their traction systems. Application of power electronic modules in automobiles has generated the need for reliable and low-cost high-temperature electronics which can operate at the extreme temperatures that exist under the hood. In...
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ژورنال
عنوان ژورنال: International Journal of High Speed Electronics and Systems
سال: 2011
ISSN: 0129-1564,1793-6438
DOI: 10.1142/s0129156411006763